1994. 12. 20 1/2 semiconductor technical data KTC1027 epitaxial planar npn transistor revision no : 0 high voltage application. feature complementary to kta1023. maximum rating (ta=25 1 ) dim millimeters a b d e g h k l 1. emitter 2. collector 3. base p to-92l 7.20 max 5.20 max 2.50 max 0.60 max 1.27 1.70 max 0.55 max 14.00 0.50 0.35 min 0.75 0.10 4 f j m o q 25 1.25 1.50 0.10 max depth:0.2 123 b a c q k ff m m n n o h l j d c n g p hh e d h r s 12.50 0.50 r 1.00 s 1.15 max + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:80 160, y:120 240 cha racteristic symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5 v collector current i c 800 ma emitter current i e -800 ma collector power dissipation p c 1 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =120v, i e =0 - - 100 na emitter cut-off current i ebo v eb =5v, i c =0 - - 100 na collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 120 - - v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 5.0 - - v dc current gain h fe (note) v ce =5v, i c =100ma 80 - 240 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 1.0 v base-emitter voltage v be v ce =5v, i c =500ma - - 1.0 v transition frequency f t v ce =5v, i c =100ma - 120 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - - 30 pf
1994. 12. 20 2/2 KTC1027 revision no : 0 i - v c ce ce collector-emitter voltage v (v) 0 2 10 12 200 c 0 collector current i (ma) v - i ce(sat) c c collector current i (ma) 0 5 10 30 0.01 ce(sat) 1 collector-emitter saturation 10 dc current gain h fe 300 30 10 5 3 collector current i (ma) c c fe h - i 20 collector current i (ma) c 30 10 5 3 collector-emitter voltage v (v) ce safe operating area collector current i (ma) 0 c 200 0.4 0.2 0 base-emitter voltage v (v) be be c i - v pc - ta ambient temperature ta ( c) 02040 0.5 c 0 collector power dissipation p (w) 468 400 600 800 1k common emitter ta=25 c i =1ma b 0ma 15ma 10ma 7ma 3ma 4ma 5ma 2ma 100 300 1k 30 50 100 common emitter v =5v ce ta=100 c ta=25 c ta=-25 c voltage v (v) 50 100 300 1k 0.03 0.05 0.1 0.3 0.5 common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c 0.6 0.8 10 400 600 800 common emitter v =5v ce ta =1 0 0 c ta=25 c ta=- 25 c 60 80 100 120 140 160 1.0 1.5 2.0 2.5 3.0 3.5 50 100 300 50 100 300 500 1k 3k curves must be derated linearly with increase in temperature single nonrepetit- ive pulse ta=25 c i max. (pulsed) c c (continuous) i max. 1m s 10ms 100ms v max. ceo d c operatio n t c= 2 5 c tc=ta ta=25 c 1 2 1 2
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